PART |
Description |
Maker |
HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 x16 SDRAM x16内存 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes CAP SMD 0805 .01UF 50V 5% CONNECTOR ACCESSORY From old datasheet system
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Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
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HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 |
4 Banks x 1M x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
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Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
HY57V561620CLT HY57V561620CT |
4 Banks x 4M x 16Bit Synchronous DRAM
|
Hynix Semiconductor
|
K4S28163LD-RFR |
2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
|
Samsung Electronic
|
K4S561632A K4S561632A-TC_L1H K4S561632A-TC_L1L K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S511533F K4S511533F-YC K4S511533F-F1H K4S511533F |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY57V56162 HY57V561620CT HY57V561620CT-H |
4 Banks x 4M x 16Bit Synchronous DRAM 16Mx16|3.3V|8K|6/K/H/8/P/S|SDRSDRAM-256M
|
HYNIX
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K4M281633F K4M281633F-C K4M281633F-F1L K4M281633F- |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行54FBGA移动SDRAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
KM416S1021C KM416S1021CT-G7 KM416S1021CT-G8 KM416S |
512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface 12k × 16 × 2银行同步DRAM接口的萨里卫星技术有限公
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4D64163HF K4D64163HF-TC60 K4D64163HF-TC33 K4D6416 |
From old datasheet system 1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4M64163PK K4M64163PK-BE75 K4M64163PK-RE75 K4M6416 |
4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 100万16 × 4银行4FBGA移动SDRAM
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SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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